SiGe-based semiconductor-on-insulator substrate created by low-energy separation-by-implanted-oxygen

SiGe-based semiconductor-on-insulator (SOI) substrates have been successfully created by the separation-by-implanted-oxygen technique. Low-energy oxygen ion implantation was performed at 25 kV on a strain-relieved Si${}_{\text{0.82}}$ Ge ${}_{\text{0.18}}$ virtual substrate grown on Si(001). A good SOI geometry with a 25-nm top SiGe layer was obtained over a dose window of ${\text{2–2.5×10}}^{17}$ ${\mathrm{cm}}^{\mathrm{-2}}$ , and a flat SiGe surface and sharp ${\mathrm{SiGe/SiO}}_{\mathrm{2}}$ interfaces were achieved at a low substrate temperature of 550°C. Compositional analysis shows that the top SiGe layer nearly conserves the same composition as the underlying alloy substrate.