Deep level defects in n-type GaN grown by molecular beam epitaxy
- 9 March 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (10) , 1211-1213
- https://doi.org/10.1063/1.121016
Abstract
Deep-level transient spectroscopy has been used to characterize electronic defects in n- type GaN grown by reactive molecular-beam epitaxy. Five deep-level electronic defects were observed, with activation energies E 1 =0.234±0.006, E 2 =0.578±0.006, E 3 =0.657±0.031, E 4 =0.961±0.026, and E 5 =0.240±0.012 eV. Among these, the levels labeled E 1 , E 2 , and E 3 are interpreted as corresponding to deep levels previously reported in n- GaN grown by both hydride vapor-phase epitaxy and metal organic chemical vapor deposition. Levels E 4 and E 5 do not correspond to any previously reported defect levels, and are characterized for the first time in our studies.Keywords
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