Thin Film Transistors with Electron Mobility of 40 cm2V−1s−1 Made from Directly Deposited Intrinsic Microcrystalline Silicon
- 1 January 2000
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Evolution of the microstructure in microcrystalline silicon prepared by very high frequency glow-discharge using hydrogen dilutionJournal of Applied Physics, 2000
- Evolutionary phase diagrams for plasma-enhanced chemical vapor deposition of silicon thin films from hydrogen-diluted silaneApplied Physics Letters, 1999
- Inverter made of complementary p and n channel transistors using a single directly deposited microcrystalline silicon filmApplied Physics Letters, 1999
- Intrinsic microcrystalline silicon by plasma-enhanced chemical vapor deposition from dichlorosilaneApplied Physics Letters, 1998
- Optical and transport studies on thin microcrystalline silicon films prepared by very high frequency glow discharge for solar cell applicationsJournal of Applied Physics, 1997
- Substrate selectivity in the formation of microcrystalline silicon: Mechanisms and technological consequencesApplied Physics Letters, 1995
- Improvement of grain size and deposition rate of microcrystalline silicon by use of very high frequency glow dischargeApplied Physics Letters, 1994
- Crystallized Si films by low-temperature rapid thermal annealing of amorphous siliconJournal of Applied Physics, 1989