Inverter made of complementary p and n channel transistors using a single directly deposited microcrystalline silicon film
- 23 August 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (8) , 1125-1127
- https://doi.org/10.1063/1.124617
Abstract
We report a p channel thin-film transistor(TFT) made of directly deposited microcrystalline silicon (μc- Si ). By integrating this pTFT with its n channel counterpart on a single μc- Si film, we fabricated a complementary metal-silicon oxide-silicon (CMOS) inverter of deposited μc- Si . The μc- Si channel material was grown at 320 °C by plasma-enhanced chemical vapor deposition in a process similar to the deposition of hydrogenated amorphous silicon. The highest postdeposition TFT process temperature was 280 °C. The low-temperature p channel μc- Si TFT and the integrated CMOS inverter represent building blocks of a digital circuit technology based on ultralow-temperature silicon.Keywords
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