Low Temperature Growth of Nanocrystalline Silicon From SiF4 + SiH4
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
The electrical conductivity of nc-Si films grown from SiF4 and H2 with constant arsenic doping rises from 10-5 to 10 Scm-1 as the thickness rises from ˜ 0.1 to 1 μm. This variation demonstrates the strong influence of film structure on conductivity. We show that the conductivity of undoped nc-Si films of constant thickness can be varied by adding SiH4 to the SiF4 and H2 source gas.Keywords
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