In-Situ Chemically Cleaning Poly-Si Growth at Low Temperature
- 1 December 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (12S) , 4555-4558
- https://doi.org/10.1143/jjap.31.4555
Abstract
We report a novel growth method of polysilicon thin films on glass substrates at a low temperature (450°C) by plasma chemical vapor deposition (PCVD) using SiH4/SiF4 mixture gases. In this method, the conventional low-cost glass substrates such as Corning 7059 may be used because of the low deposition temperature. Furthermore, the conventional vacuum chamber with its base pressure of ∼1×10-4 Pa, which is usually thought to be inadequate for high-quality Si growth because of its many impurities, can be used since the growing surface of polysilicon is in-situ chemically cleaned by SiF4 plasma. The polysilicon films obtained on glass show strong (100) preferred orientation. A grain size as large as 250 nm is obtained in a film with 700 nm thickness. The field-effect mobility of 44 cm2/V·s has been achieved in a thin-film transistor (TFT) using this polysilicon film.Keywords
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