Selective Si epitaxial growth by plasma-enhanced chemical vapor deposition at very low temperature
- 27 January 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (4) , 442-444
- https://doi.org/10.1063/1.106628
Abstract
A rf-plasma chemical vapor deposition process for selective epitaxial Si growth from SiH4 and SiF4 at a deposition temperature of 300–400 °C is described. Selective epitaxial growth is obtained as a balance of deposition precursors versus etching by F species. Also, the results indicate that a high H-surface coverage is not essential to deposit crystalline Si films by very low temperature rf-plasma chemical vapor deposition. P-doped films with a mobility of 80 cm2/V s and a carrier concentration of 3×1018 cm−3 are reported.Keywords
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