Transition from Amorphous to Crystalline Silicon: Effect of Hydrogen on Film Growth
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Film formation mechanisms in the plasma deposition of hydrogenated amorphous siliconJournal of Applied Physics, 1986
- Quelques résultats théoriques sur l'étude par R.M.N. des fluides polyatomiques plansJournal de Physique Lettres, 1981
- Low-temperature crystallization of doped a-Si:H alloysApplied Physics Letters, 1980
- Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H FilmsJapanese Journal of Applied Physics, 1980
- Properties of heavily doped GDSi with low resistivityJournal of Non-Crystalline Solids, 1979
- The preparation of thin layers of Ge and Si by chemical hydrogen plasma transportSolid-State Electronics, 1968