Photo-induced reversible change of topological disorder in hydrogenated amorphous silicon
- 1 July 1986
- journal article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 54 (1) , L9-L13
- https://doi.org/10.1080/13642818608243171
Abstract
The temperature dependence of the optical absorption and photoconductivity spectra of undoped hydrogenated amorphous silicon (a-Si: H) has been measured. We observe for the first time a reversible increase of about 7% of the Urbach edge parameter E 0 between 115 and 300 K as a result of a 4 h exposure to AM1 light. This suggests that photo-induced changes in a-Si: H involve not only metastable defects near the gap centre but also topological disorder that affects the localized band-tail states.Keywords
This publication has 8 references indexed in Scilit:
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985
- Study of light-induced creation of defects in a-Si:H by means of single and dual-beam photoconductivityJournal of Non-Crystalline Solids, 1983
- Effect of site disorder on the optical absorption edge of a-Si:HxJournal of Non-Crystalline Solids, 1983
- The contribution of the staebler-wronski effect to gap-state absorption in hydrogenated amorphous siliconPhysica B+C, 1983
- Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous SiliconPhysical Review Letters, 1981
- Light-induced dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1981
- New Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous SiliconJapanese Journal of Applied Physics, 1980
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977