Γ-X intervalley tunneling in InAs/AlSb resonant tunneling diodes

Abstract
We present an experimental study of intravalley and intervalley transport in an InAs/AlSb/InAs/AlSb/InAs double barrier resonant tunneling diode at liquid helium temperatures. This work reports the first observation of intervalley tunneling through an InAs Γ‐point quasibound state confined by AlSb X‐point barriers. The incident energy of tunneling electrons was tuned by a transverse magnetic field (0<BX‐point AlSb barriers (with large longitudinal effective mass) as well as Γ‐point AlSb barriers.