Γ-X intervalley tunneling in InAs/AlSb resonant tunneling diodes
- 22 March 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (12) , 1385-1387
- https://doi.org/10.1063/1.108687
Abstract
We present an experimental study of intravalley and intervalley transport in an InAs/AlSb/InAs/AlSb/InAs double barrier resonant tunneling diode at liquid helium temperatures. This work reports the first observation of intervalley tunneling through an InAs Γ‐point quasibound state confined by AlSb X‐point barriers. The incident energy of tunneling electrons was tuned by a transverse magnetic field (0<BX‐point AlSb barriers (with large longitudinal effective mass) as well as Γ‐point AlSb barriers.Keywords
This publication has 19 references indexed in Scilit:
- The influence of a two- or three-dimensional electron gas in the emitter of resonant tunnelling structuresSurface Science, 1992
- Highly strained GaAs/InGaAs/AlAs resonant tunneling diodes with simultaneously high peak current densities and peak-to-valley ratios at room temperatureApplied Physics Letters, 1991
- Tight-binding model for GaAs/AlAs resonant-tunneling diodesPhysical Review B, 1991
- Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodesApplied Physics Letters, 1991
- Transverse magnetic field studies in As/As quantum-well tunneling structuresPhysical Review B, 1990
- Inelastic tunneling in AlAs-GaAs-AlAs heterostructuresApplied Physics Letters, 1988
- Magnetic field studies of negative differential conductivity in double barrier resonant tunnelling structures based on n-InP/(InGa)AsSolid-State Electronics, 1988
- Frequency limit of double-barrier resonant-tunneling oscillatorsApplied Physics Letters, 1985
- Quantum well oscillatorsApplied Physics Letters, 1984
- Variational calculations on a quantum well in an electric fieldPhysical Review B, 1983