Quenching and Enhancement of Fluorescence from Bound Excitons by Far-Infrared Radiation

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Abstract
We report some effects of photodissociation of excitons bound to impurities in GaP by far-infrared radiation. Photodissociation is typically seen as a quenching of the exciton fluorescence. The quenching depends upon the infrared wavelength and the binding energy of the exciton. Under certain circumstances an increase in the absolute intensity of fluorescence of the exciton bound to N in GaP has been observed. Evidence is presented which indicates that excitons are being liberated from a more deeply binding impurity and are being trapped at nitrogen sites. An attempt to observe phonon breakdown is discussed.