Electronic properties of the SiC-SiO/sub 2/ interface and related systems
- 22 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 101-110
- https://doi.org/10.1109/smicnd.1997.651559
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Analytical modelling of thermally-activated transportin SiC inversion layersElectronics Letters, 1997
- Improved oxidation procedures for reduced SiO2/SiC defectsJournal of Electronic Materials, 1996
- Electron localization and noise in silicon carbide inversion layersPhilosophical Magazine Part B, 1996
- Surface potential fluctuations in metal–oxide–semiconductor capacitors fabricated on different silicon carbide polytypesApplied Physics Letters, 1994
- High temperature silicon carbide MOSFETs with verylow drain leakage currentElectronics Letters, 1994
- Low-frequency, high-temperature conductance and capacitance measurements on metal-oxide-silicon carbide capacitorsJournal of Applied Physics, 1994
- 6H-silicon carbide devices and applicationsPhysica B: Condensed Matter, 1993
- Origin and consequences of the compensation (Meyer-Neldel) lawPhysical Review B, 1992
- Impact ionization and positive charge formation in silicon dioxide films on siliconApplied Physics Letters, 1992
- Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbideProceedings of the IEEE, 1991