Analytical modelling of thermally-activated transportin SiC inversion layers
- 30 January 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (3) , 243-245
- https://doi.org/10.1049/el:19970116
Abstract
When the conductivity of a silicon carbide (SiC) inversion layer is thermally activated it is confirmed that the activation energy controlling transport is almost inversely proportional to the electron concentration. Simple formulas are then derived for expressing the apparent surface mobility and the threshold voltage. The mobility is proportional to the temperature.Keywords
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