Dislocation Motion in Secondary Slip Planes in Alkali Halide Crystals at Room Temperature
- 1 January 1970
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 38 (2) , 777-782
- https://doi.org/10.1002/pssb.19700380227
Abstract
Dislocation motion in {100} 〈110〉 and {111} 〈110〉 secondary slip systems has been observed in NaCl, KCl, KBr, KI, and RbI crystals at room temperature by means of a special loading and etch‐pit technique. The observed reduction in the difference between the critical resolved shear stress τs{110} in the primary slip system {110} 〈110〉 and τs in the secondary slip system in the above sequence of crystals demonstrates the increasing influence of multiplication processes of dislocations on dislocation motion in the primary system. A considerably lower effect of γ‐irradiation on τs{100} and τs{111} has been found in comparison with that of τs{110}. Possible reasons are discussed briefly.Keywords
This publication has 4 references indexed in Scilit:
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- Radiation Hardening in Alkali-Halide CrystalsJournal of Applied Physics, 1964
- Effect of Impurities on the Flow Stress of LiF CrystalsJournal of Applied Physics, 1962
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