Integrated multisensor chip
- 1 April 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 7 (4) , 254-256
- https://doi.org/10.1109/edl.1986.26363
Abstract
A multipurpose integrated-sensor chip has been fabricated for the simultaneous measurement of physical and chemical variables. The multipurpose chip which measures 8 × 9 mm2contains conventional MOS devices for signal conditioning, array accessing, and output buffering along with the following on-chip sensors: a gas-flow sensor, an infrared-sensing array, a chemical-reaction sensor, cantilever-beam accelerometers, surface-acoustic-wave (SAW) vapor sensors, a tactile sensor array, and an infrared charge-coupled device imager. The multisensing functions of this chip utilize both the pyroelectdc and piezoelectric effects in ZnO thin films. Fabrication of the chip is carried out using a conventional 3-µm Si NMOS process combined with Si micromachining techniques. Compatible fabrication technology and sensor properties are described.Keywords
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