Strain field around a single-dimer vacancy of Si(100) surface studied by a Monte Carlo simulation
- 15 May 1998
- journal article
- Published by Elsevier in Surface Science
- Vol. 402-404, 851-855
- https://doi.org/10.1016/s0039-6028(97)00978-3
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Dimer buckling induced by single-dimer vacancies on the Si(001) surface nearPhysical Review B, 1997
- Structural phase transition on Si(001) and Ge(001) surfacesPhase Transitions, 1995
- Low-temperature scanning-tunneling-microscopy observations of the Si(001) surface with a low surface-defect densityPhysical Review B, 1994
- Order-disorder phase transition on the Si(001) surface: Critical role of dimer defectsPhysical Review B, 1994
- Direct observation of an increase in buckled dimers on Si(001) at low temperaturePhysical Review Letters, 1992
- Determination of the local electronic structure of atomic-sized defects on Si(001) by tunneling spectroscopyJournal of Vacuum Science & Technology A, 1989
- Order-disorder transition on Si(001): c(4 × 2) to (2 × 1)Surface Science, 1987
- Reconstruction of the Si(100)-2x1 SurfacePublished by Springer Nature ,1985
- Low-Energy Ion Scattering from the Si(001) SurfacePhysical Review Letters, 1982
- Atomic and Electronic Structures of Reconstructed Si(100) SurfacesPhysical Review Letters, 1979