Streak patterns in low-energy electron diffraction on Si(001)

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Abstract
The phase transition of Si(001) has been studied by investigating the temperature dependence of streak patterns in low-energy electron diffraction above the transition temperature. The streak pattern remains up to well above the transition temperature of c(4×2) to 2×1. The temperature dependence of the width and the length of the streak cannot be described by a simple two-dimensional Ising system. The result is discussed in terms of effects of a strong anisotropic coupling between adjacent asymmetric dimers, dimer vacancies, and a small amount of the p(2×2) configuration.