Observation of antiphase domain boundaries in GaAs on silicon by transmission electron microscopy
- 26 September 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (13) , 1207-1209
- https://doi.org/10.1063/1.100021
Abstract
Boundaries between different antiphase domains have been unambiguously identified in heteroepitaxial GaAs on silicon substrates by transmission electron microscopy. A simple and reliable method is described for assessing the presence or absence of these domain boundaries in GaAs. The domain size was found to be as small as ∼0.1 μm in GaAs that had been grown on nominal Si(001) in which a buried, implanted oxide had been previously formed. These boundaries are expected to degrade electrical performance and device reliability modify electronic transport and degrade device performance.Keywords
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