Crystallographic Contrast Due to Primary Ion Channelling in the Scanning Ion Microscope
- 1 April 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 30 (2) , 1240-1242
- https://doi.org/10.1109/tns.1983.4332498
Abstract
We observe large crystallographic contrast, in scanning ion micrographs of recrystallized Cu and Si, made by collecting secondary ions or electrons. The contrast is attributed to primary ion-channelling effects. Observed relative secondary ion and electron yields are discussed in relation to the rate of energy loss, calculated for various crystallographic directions.Keywords
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