Annealed Czochralski grown silicon crystals: A new material for the monochromatisation of synchrotron radiation and X-rays above 60 keV
- 1 January 1988
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 29 (4) , 661-674
- https://doi.org/10.1016/0168-583x(88)90474-0
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Pendellösung intensity-beat measurements with 0.0392- and 0.0265-Åγradiation in siliconPhysical Review B, 1986
- High resolution studies of crystal mosaicity by means of double crystal γ-ray diffractometryJournal of Crystal Growth, 1986
- Early stages of oxygen segregation and precipitation in siliconJournal of Applied Physics, 1984
- Characterization of crystals by γ-ray and neutron diffraction methodsJournal of Crystal Growth, 1983
- X-ray measurement of minute lattice strain in perfect silicon crystalsZeitschrift für Kristallographie - Crystalline Materials, 1981
- Precipitation of oxygen in dislocation-free siliconPhysica Status Solidi (a), 1979
- The integrated intensities of perfect crystalsActa Crystallographica, 1965
- Pendellösung Fringes in Distorted Crystals III. Application to homogeneously bent crystalsJournal of the Physics Society Japan, 1964
- Pendellösung Fringes in Distorted Crystals II. Application to Two-Beam CasesJournal of the Physics Society Japan, 1964
- Pendellösung Fringes in Distorted Crystals I. Fermat's Principle for Bloch WavesJournal of the Physics Society Japan, 1963