An experimental determination of electrical resistivity of dislocations in aluminium

Abstract
Flow stress, electrical resistivity changes and dislocation density were measured in lightly cold-worked and in partially annealed polycrystalline aluminium of 99·996% purity. Dislocation density was determined by thin film transmission electron microscopy. The dislocation resistivity obtained from these measurements was found to be independent of dislocation density and arrangement, and to have values (2·9 ± 0·4) × 10−19 ohm cm3 at liquid air temperature and (1·8 ± 0·1) × 10−19 ohm cm3 at 4·2°K.