Native oxidation of the Si(001) surface: Evidence for an interfacial phase
- 11 March 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (10) , 1044-1046
- https://doi.org/10.1063/1.104418
Abstract
We have used grazing incidence x‐ray scattering techniques to investigate the structure of the Si‐SiO2 interface, obtained by native oxidation of a Si(001) surface. The x‐ray diffraction patterns reveal a twofold symmetric interfacial phase, of 2×1 periodicity. This interfacial phase, which is coherent with the silicon substrate, extends over very large lateral distances (up to 5000 Å) and is less than 5 Å thick. This phase is very disordered at the atomic scale. Its extent and perfection strongly depend on the flatness of the initial silicon substrate.Keywords
This publication has 11 references indexed in Scilit:
- Correlation of surface morphology and chemical state of Si surfaces to electrical propertiesApplied Surface Science, 1989
- Growth of epitaxial silica on vicinal Si(001) surfaces during thermal oxidation in O2Philosophical Magazine Part B, 1989
- Microscopic structure of the/Si interfacePhysical Review B, 1988
- Effect of processing on the structure of the Si/SiO2 interfaceApplied Physics Letters, 1988
- X-ray scattering studies of the Si-interfacePhysical Review Letters, 1988
- Study of the interfacial structure between Si (100) and thermally grown SiO2 using a ball-and-spoke modelJournal of Applied Physics, 1987
- The structural models of the Si/SiO2 interfaceJournal of Non-Crystalline Solids, 1987
- A novel X-ray scattering diffractometer for studying surface structures under UHV conditionsNuclear Instruments and Methods in Physics Research, 1984
- Electronic structure of defects at Si/SiO2 interfacesJournal of Vacuum Science and Technology, 1981
- Studies of the Si-SiO2 interface by MeV ion channelingApplied Physics Letters, 1979