Phonons in a surface with a mass defect: As:Si(111)(1×1)
- 15 February 1990
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (6) , 3578-3581
- https://doi.org/10.1103/physrevb.41.3578
Abstract
Using inelastic helium scattering, we have made the first measurements of surface-phonon dispersion relations in a ‘‘capped’’ semiconductor, As:Si(111)(1×1). The simple, single-layer surface modification introduced by the As atoms gives rise to two surface acoustic modes. We suggest that such surfaces present a unique opportunity for studying the effect on the surface lattice dynamics of surface modification (i.e., a nearly ideal mass defect) and that the results may provide general insight into the dynamical behavior of clean as well as adsorbate-covered surfaces.Keywords
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