Electrical Parameter Sensitivity of Deep Submicron and Micron MOSFET Devices with Variation in Processing Conditions
- 1 January 1993
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Design and experimental technology for 0.1-µm gate-length low-temperature operation FET'sIEEE Electron Device Letters, 1987
- Investigation of parameter sensitivity of short channel mosfetsSolid-State Electronics, 1982