Nature and diffusion of the self-interstitial in silicon
- 30 June 1983
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 16 (18) , L613-L616
- https://doi.org/10.1088/0022-3719/16/18/003
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Non-radiative transitions in semiconductorsReports on Progress in Physics, 1981
- Electron-irradiation studies of p–n junctions in silicon bipolar transistorsPhilosophical Magazine Part B, 1981
- A large unit cell semiempirical molecular orbital approach to the properties of solids. II. Covalent materials: diamond and siliconJournal of Physics C: Solid State Physics, 1979
- The structure and motion of the self-interstitial in diamondSolid-State Electronics, 1978
- Relaxation about the vacancy in diamondJournal of Physics C: Solid State Physics, 1978
- A new mechanism for interstistitial migrationPhysics Letters A, 1972
- Point defect calculations in diamond-type crystals by the extended Huckel method 1: General theory and the vacancy problemJournal of Physics C: Solid State Physics, 1971