Electron-irradiation studies of p–n junctions in silicon bipolar transistors
- 1 April 1981
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 43 (4) , 715-732
- https://doi.org/10.1080/01418638108222169
Abstract
(3) All these effects can be explained by an interstitial level which is perhaps 0·40 ± 0·05 eV above the top of the valence band.Keywords
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