Growth and characterization of III–VI layered crystals like GaSe, GaTe, InSe, GaSe1-xTex and GaxIn1-xSe
- 31 December 1982
- journal article
- Published by Elsevier in Progress in Crystal Growth and Characterization
- Vol. 5 (4) , 323-413
- https://doi.org/10.1016/0146-3535(82)90004-1
Abstract
No abstract availableThis publication has 90 references indexed in Scilit:
- Photovoltaic efficiency of InSe solar cellsSolar Energy Materials, 1979
- Resistivity anisotropy in the layer plane of GaTePhysica Status Solidi (a), 1979
- Photovoltaic effect in InSe - Application to Solar Energy ConversionRevue de Physique Appliquée, 1979
- Electrooptical properties of SnO2 spray–GaSe and SnO2 spray–GaTe heterojunctionsPhysica Status Solidi (a), 1978
- The band structures of gallium and indium selenideJournal of Physics C: Solid State Physics, 1977
- Electrical properties of gatexSe1–x crystalsPhysica Status Solidi (a), 1977
- Interatomic distances in GaSexS1−xPhysica Status Solidi (a), 1976
- Valence band structures and core-electron energy levels in the monochalcogenides of gallium. Photoelectron spectroscopic studyJournal of the Chemical Society, Faraday Transactions 2: Molecular and Chemical Physics, 1972
- Photovoltaic Effect in GaS and GaSe CrystalsPhysica Status Solidi (a), 1971
- Metallographic Examination of the Phase Diagram of the Gallium-Tellurium SystemNature, 1963