On the growth of GaInAs by MOMBE (CBE)
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 1062-1064
- https://doi.org/10.1016/0022-0248(91)90611-8
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Growth of high purity InP by metalorganic MBE (CBE)Journal of Crystal Growth, 1990
- Effects of VIII ratio on electronic and optical properties of GaInAs layers grown by MOCVDJournal of Crystal Growth, 1989
- Substrate temperature dependence of GaAs, GaInAs, and GaAlAs growth rates in metalorganic molecular beam epitaxyApplied Physics Letters, 1987
- The growth of GaAs, AIGaAs, InP and InGaAs by chemical beam epitaxy using group III and V alkylsJournal of Electronic Materials, 1986