Effects of VIII ratio on electronic and optical properties of GaInAs layers grown by MOCVD
- 30 April 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 94 (4) , 849-856
- https://doi.org/10.1016/0022-0248(89)90117-6
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Carbon incorporation in MOMBE-grown Ga0.47In0.53AsJournal of Crystal Growth, 1989
- W/WSi gate self-aligned HIFETs (heterointerface FETs) using an AlInAs/GaInAs heterostructure grown by MOCVDElectronics Letters, 1988
- MOVCD growth of selectively doped AlInAs/GaInAs heterostructuresJournal of Crystal Growth, 1988
- High-transconductance AlInAs/GaInAs HIFETs grown by MOCVDElectronics Letters, 1987
- Effect of growth temperature on the optical, electrical and crystallographic properties of epitaxial indium gallium arsenide grown by MOCVD in an atmospheric pressure reactorJournal of Crystal Growth, 1986
- MOCVD growth of selectively doped AlInAs/GaInAs heterostructures and its application to HIFETs (heterointerface FETs)Electronics Letters, 1986
- Two-dimensional electronic systems for high-speed device applicationsSurface Science, 1984
- Residual shallow acceptors in GaAs layers grown by metal-organic vapor phase epitaxyJournal of Applied Physics, 1983
- Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44<x<0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal organic chemical vapor depositionJournal of Applied Physics, 1983
- Hot-carrier relaxation in photoexcited In0.53Ga0.47AsApplied Physics Letters, 1980