Grain Growth in Dispersions of µc-Si IN a-Si:H
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
We annealed dispersions of microcrystalline Si in amorphous silicon by heating to 550 °C. The dispersions had been deposited by plasma-enhanced CVD from SiF4 and H2 at 250 to 290 °C. By X-ray diffraction and Raman scattering we observe an increase in crystal size and volume fraction. The electron mobility, measured by the Van der Pauw method, also was raised to a highest value of 91 cm2V−1s−1 at the electron density of 7.6×1017 cm−3.Keywords
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