a-Si and μc-Si Grown from SiF4 with High H2 Dilution in a DC Glow Discharge
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- High performance low-temperature poly-Si n-channel TFTs for LCDIEEE Transactions on Electron Devices, 1989
- Use of μ-Si:H Wide Band Gap N- and P-Type Materials for Producing Solar Cells by a TCDDC SystemMRS Proceedings, 1988
- Epitaxial Growth of Silicon by Plasma Chemical Vapor Deposition at a Very Low Temperature of 250°CJapanese Journal of Applied Physics, 1987
- Preparation of Polycrystalline Silicon by Hydrogen-Radical-Enhanced Chemical Vapor DepositionJapanese Journal of Applied Physics, 1987
- The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductorsSolid State Communications, 1986
- Preparation of α-(Si.Ge):H Alloys by D.C. Glow Discharge DepositionMRS Proceedings, 1985
- Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasmaJournal of Non-Crystalline Solids, 1983
- Selective Etching of Silicon Dioxide Using Reactive Ion Etching with CF 4 ‐ H 2Journal of the Electrochemical Society, 1979
- Thin film MOSFET’s fabricated in laser-annealed polycrystalline siliconApplied Physics Letters, 1979
- Raman scattering in pure and hydrogenated amorphous germanium and siliconJournal of Non-Crystalline Solids, 1979