Preparation of α-(Si.Ge):H Alloys by D.C. Glow Discharge Deposition
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
We report the preparation of α-(Si.Ge):H alloy films by decomposition of SiF4, GeF4, and H2 in a d.c. glow discharge. Germanium is incorporated very efficiently from GeF4. The germanium content and optical gap canbe controlled by varying the GeF4 flow while keeping the SiF4 and H2 flows constant. The films, all prepared at 300 ºC substrate temperature, exhibit high photo- to dark-conductivity ratios for compositions of up to -25% germanium.Keywords
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