Low spin density amorphous hydrogenated germanium prepared by homogeneous chemical vapor deposition
- 15 February 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (4) , 369-371
- https://doi.org/10.1063/1.95634
Abstract
Structural [nuclear magnetic and electron spin resonance (ESR), infrared spectroscopy], optical (absorption, photoacoustic, photoluminescence), and electrical data are presented for amorphous hydrogenated germanium (a-Ge:H) prepared by homogeneous chemical vapor deposition (HOMOCVD). Like HOMOCVD prepared amorphous hydrogenated silicon, these a-Ge:H materials exhibit very low ESR spin densities and systematically varying optical gaps and hydrogen contents. Nevertheless, the material displays no subband gap photoluminescence and minimal photoconductivity, suggesting that a spinless defect may ultimately limit the device application of all types of a-Ge:H and a-(Ge,Si):H films.Keywords
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