Low defect density amorphous hydrogenated silicon prepared by homogeneous chemical vapor deposition

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Abstract
Compositional, structural and transport data are presented for amorphous hydrogenated silicon (a‐Si:H) prepared by homogeneous chemical vapor deposition (HOMOCVD). We find a remarkable similarity in properties between HOMOCVD and plasma a‐Si:H, including a nearly identical range (250–300 °C) for the preparation of highly photoconductive films. However, unlike plasma material, HOMOCVD a‐Si:H exhibits negligible photo‐induced instabilities (Staebler–Wronski effect) and low spin concentrations over a wide span of deposition conditions. These results indicate that a significant defect‐creating reaction, most likely surface Si‐H bond scission, is occurring in the plasma environment, but absent in HOMOCVD.