The influence of preparation conditions on the hydrogen content of amorphous glow-discharge silicon
- 15 January 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (2) , 173-174
- https://doi.org/10.1063/1.90718
Abstract
The hydrogen content in a‐Si films prepared by the glow‐discharge technique has been studied as a function of preparation conditions. From the γ‐ray yield of the nuclear reaction 1H(15N,αγ) 12C we find hydrogen contents ranging from 4 up to 50 at.%, depending largely on the deposition temperature of the films. Depth profiles show that hydrogen is incorporated uniformly into the films.Keywords
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