Incoherent light-induced diffusion of arsenic into silicon from a spin-on source
- 15 September 1983
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (6) , 582-584
- https://doi.org/10.1063/1.94433
Abstract
A new approach to impurity diffusion in semiconductors based on the use of a spin‐on source and short‐time incoherent light exposure has been developed and experimentally investigated for arsenic diffusion into silicon. Arsenic‐doped oxide films, ∼0.19 μm thick, were spin‐on deposited onto 〈100〉 oriented silicon crystals and heated with radiation from a xenon lamp to temperatures between 950 and 1200 °C for times of 10 and 25 s. Arsenic diffused layers tested with resistivity measurements and Rutherford backscattering analysis were characterized by a maximum surface concentration ∼1×1020 atom/cm3 and a maximum depth ∼0.40 μm.Keywords
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