First principles and macroscopic theories of semiconductor epitaxial growth
- 1 April 2002
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 237-239, 206-211
- https://doi.org/10.1016/s0022-0248(01)01903-0
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Equilibrium Phase Diagrams for Stranski-Krastanov Structure Mode of III–V Ternary Quantum DotsJapanese Journal of Applied Physics, 1999
- Enhanced Nucleation and Enrichment of Strained-Alloy Quantum DotsPhysical Review Letters, 1998
- Dislocations and strain relief in compositionally graded layersApplied Physics Letters, 1993
- Misfit dislocation generation in epitaxial layersCritical Reviews in Solid State and Materials Sciences, 1991
- New empirical approach for the structure and energy of covalent systemsPhysical Review B, 1988
- Nucleation and growth of thin filmsReports on Progress in Physics, 1984
- Defects in epitaxial multilayersJournal of Crystal Growth, 1976
- Defects in epitaxial multilayersJournal of Crystal Growth, 1975
- Crystal Interfaces. Part II. Finite OvergrowthsJournal of Applied Physics, 1963
- Crystal Interfaces. Part I. Semi-Infinite CrystalsJournal of Applied Physics, 1963