Lead zirconate titanate ferroelectric capacitors produced on sapphire and gallium arsenide substrates
- 1 May 1995
- journal article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 8 (3-4) , 309-316
- https://doi.org/10.1080/10584589508219665
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Imprint testing of ferroelectric capacitors used for non-volatile memoriesIntegrated Ferroelectrics, 1994
- Pulsed ion beam surface analysis as a means of in situ real-time analysis of thin films during growthJournal of Vacuum Science & Technology A, 1994
- Polycrystalline La0.5Sr0.5CoO3/PbZr0.53Ti0.47O3/ La0.5Sr0.5CoO3 ferroelectric capacitors on platinized silicon with no polarization fatigueApplied Physics Letters, 1994
- Effect of electrodes on the ferroelectric properties of pulsed-laser ablation-deposited PbZrXTi1-xO3thin film capacitorsFerroelectrics, 1994
- In Situ, Real-Time Analysis of the Growth of Ferroelectric and Conductive Oxide Heterostructures by a New Time-of-Flight Pulsed Ion Beam Surface Analysis TechniqueMRS Proceedings, 1994
- Investigation of the ablated flux characteristics during pulsed laser ablation deposition of multicomponent oxidesJournal of Applied Physics, 1993
- Epitaxial Growth of Ferroelectric Thin Films on GaAs with MgO Buffer Layers by Pulsed Laser DepositionMRS Proceedings, 1991
- Processing and parameters of sol-gel PZT thin-films for GaAs memory applicationsFerroelectrics, 1990