Thin-film Mo-Si interaction
- 1 June 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (11) , 797-798
- https://doi.org/10.1063/1.90648
Abstract
Previous results of single‐crystal Si‐Mo interaction indicate that MoSi2, the phase predicted by the Walser‐Bené theory, is the first silicide to form at the Si‐Mo interface. We now report that in thin‐film Si‐Mo diffusion couples either MoSi2 or a combination of Mo3Si/Mo5Si3 forms at the interface. These two results have never been observed to occur in the same sample, indicating a bistable growth mechanism. We believe this growth to be triggered by the initial interface which is modified by sample preparation conditions. Interdiffusion and reaction of Mo with amorphous Si is also found to be slower than with crystalline Si.Keywords
This publication has 5 references indexed in Scilit:
- Reaction kinetics of molybdenum thin films on silicon (111) surfaceJournal of Applied Physics, 1978
- Growth of platinum silicide under protective layersApplied Physics Letters, 1977
- Silicidbildung in dünnen molybdän- und wolframschichten auf einkristallinen siliziumsubstraten bei relativ niedrigen temperaturenThin Solid Films, 1976
- First phase nucleation in silicon–transition-metal planar interfacesApplied Physics Letters, 1976
- Principles and applications of ion beam techniques for the analysis of solids and thin filmsThin Solid Films, 1973