Excitation and recombination processes during electroluminescence of rare earth-activated materials
- 1 January 1994
- journal article
- research article
- Published by Taylor & Francis in Critical Reviews in Solid State and Materials Sciences
- Vol. 19 (4) , 199-239
- https://doi.org/10.1080/10408439408244590
Abstract
Electroluminescence phenomena in rare earth doped materials are reviewed. The main emphasis is in the basic physics of EL processes, viz. direct and indirect excitation and nonradiative and radiative recombination of rare earth ions. The device structures, the recent material development, and the present state of art in AC operated thin fdm EL devices have been reviewed as well.Keywords
This publication has 103 references indexed in Scilit:
- Optical recombination mechanisms in Eu2+-doped CaS and SrS thin filmsJournal of Applied Physics, 1993
- Excitonic processes in II–VI compounds doped with transition metal and rare earth impuritiesJournal of Crystal Growth, 1992
- High efficiency SrS,SrSe:CeCl3 based thin film electroluminescent devicesJournal of Crystal Growth, 1992
- High luminance white EL devices using SrS:Ce,Eu,K films deposited in a H2 atmosphereJournal of Crystal Growth, 1992
- The copper centre: a transient shallow acceptor in ZnS and CdSJournal of Physics: Condensed Matter, 1992
- Electroluminescence of doped organic thin filmsJournal of Applied Physics, 1989
- White Light Emitting Thin-Film Electroluminescent Devices with SrS:Ce,Cl/ZnS:Mn Double Phosphor LayersJapanese Journal of Applied Physics, 1986
- Auger effect at localized impurities in semiconductorsPhysica B+C, 1983
- Ionization energies of doubly and triply ionized lanthanides by a linearization techniqueThe Journal of Chemical Physics, 1974
- Zwischenmolekulare Energiewanderung und FluoreszenzAnnalen der Physik, 1948