Three-terminal Si/SiGe digital optoelectronic switch
- 30 January 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (3) , 292-293
- https://doi.org/10.1049/el:19920180
Abstract
The DC electrical and optical characteristics of a three-terminal Si/Si0.75Ge0.25 digital optoelectronic switch are presented. The device is found to have bistable electrical states; a high impedance (12 kΩ) off state connected to a low impedance (50Ω) on state by a region of negative differential resistance. The current-voltage characteristics of the device are found to be nested towards lower switching voltage as the third terminal injection current is increased. With 2.0 mA of current injected into the active layer of the device, the switching voltage was decreased to 1.6 V from 3.7 V. Optical injection, concurrent with third-terminal injection, is also examined.Keywords
This publication has 1 reference indexed in Scilit:
- An Inversion Channel Technology For Opto-Electronic IntegrationPublished by SPIE-Intl Soc Optical Eng ,1989