Photochemical dry etching of GaAs
- 15 October 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (8) , 892-894
- https://doi.org/10.1063/1.95404
Abstract
GaAs exhibits greatly enhanced reactivity with gas-phase reactive Cl species when the surface is irradiated with low intensity laser light having a frequency which can excite above the band gap of GaAs. This laser-induced reactivity is shown to be photochemical rather than thermal in origin. This is the first reported observation of a purely photochemical dry etching process for a III-V semiconductor material.Keywords
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