Atomic Layer Deposition of Zirconium Titanium Oxide from Titanium Isopropoxide and Zirconium Chloride
- 3 April 2001
- journal article
- research article
- Published by American Chemical Society (ACS) in Chemistry of Materials
- Vol. 13 (5) , 1528-1532
- https://doi.org/10.1021/cm0012062
Abstract
No abstract availableKeywords
This publication has 38 references indexed in Scilit:
- Atomic Layer Deposition and Chemical Vapor Deposition of Tantalum Oxide by Successive and Simultaneous Pulsing of Tantalum Ethoxide and Tantalum ChlorideChemistry of Materials, 2000
- Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen SourcesScience, 2000
- Pushing the LimitsScience, 1999
- Spectroscopic Characterization of Sol−Gel-Derived Mixed OxidesThe Journal of Physical Chemistry B, 1998
- Crystallization behaviour of the series of solid solutions ZrxTi1−xO2 and PbyZrxTi1−xO2+y prepared by the sol-gel processJournal of Materials Chemistry, 1998
- Effect of crystal structure on optical properties of TiO2 films grown by atomic layer depositionThin Solid Films, 1997
- Structural and electrical characteristics of rapid thermally processed ferroelectric Bi4Ti3O12 thin films prepared by metalorganic solution deposition techniqueJournal of Applied Physics, 1996
- The dielectric properties of zirconiaJournal of Materials Science, 1992
- Dielectric constant of Y-stabilized zirconia, the polarizability of zirconia and the oxide additivity ruleMaterials Research Bulletin, 1989
- Phase equilibrium relations in the systems Lime-Titania and Zirconia-TitaniaJournal of Research of the National Bureau of Standards, 1954