Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs
- 1 January 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 47 (10) , 1858-1863
- https://doi.org/10.1109/16.870562
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
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