A 35 GHz monolithic MESFET LNA
- 6 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 151-155
- https://doi.org/10.1109/mcs.1988.197311
Abstract
The design and fabrication of a state-of-the-art 35-GHz monolithic low-noise amplifier (LNA) is briefly described. The amplifier, with 6.5-dB gain, 4-dB noise figure, and 10-dBm power output at 1-dB gain compression, is based on a 0.25- mu m*200- mu m molecular-beam epitaxy (MBE)-grown MESFET. Device, circuit design, fabrication details, and test results are presented.<>Keywords
This publication has 1 reference indexed in Scilit:
- A functional GaAs FET noise modelIEEE Transactions on Electron Devices, 1981