Use of independently controlled Cl radical and Ar ion beams for anisotropic chemically enhanced etching of GaAs
- 5 December 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (23) , 2308-2310
- https://doi.org/10.1063/1.100262
Abstract
We have implemented a novel dry etching technique that combines chlorine radicals generated in a microwave plasma with an argon ion beam. This uniquely provides separate control of the radical flux and ion flux so that the degree of anisotropy and chemical enhancement can be arbitrarily varied. We demonstrate that this etching technique should be capable of producing smooth structures with low damage for applications in optoelectronics.Keywords
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