Surface Damage of Reactive Ion Beam Etched GaAs
- 1 June 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (6A) , L510
- https://doi.org/10.1143/jjap.25.l510
Abstract
Surface damage induced in GaAs by reactive ion beam etching (RIBE) with BCI3 is investigated. A Schottky diode structure fabricated on the etched surface is employed for characterizing the RIBE damage. To evaluate the degree of the damage with high sensitivity, the specific contact resistance through the tunneling process is measured as well as the Schottky diode parameters. The damage due to RIBE causes very little change in the Schottky diode characteristics. However, it drastically increases the specific contact resistance. This results from the decrease of the effective carrier concentration in the thin (less than 200Å ) surface damage layer.Keywords
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