A second isoelectronic multiexciton center in annealed Czochralski silicon
- 31 July 1987
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 63 (2) , 81-84
- https://doi.org/10.1016/0038-1098(87)91170-7
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Thermal-Donor-Related Isoelectronic Center in Silicon Which Can Bind up to Four ExcitonsPhysical Review Letters, 1986
- Electrical and infrared spectroscopic investigations of oxygen-related donors in siliconPhysica Status Solidi (a), 1979
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958