MOCVD epitaxial growth of single crystal GaN, AlN and AlxGa1-xN
- 1 September 1985
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 14 (5) , 633-644
- https://doi.org/10.1007/bf02654029
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Equilibrium pressure of N2 over GaN and high pressure solution growth of GaNJournal of Crystal Growth, 1984
- Properties and ion implantation of AlxGa1−xN epitaxial single crystal films prepared by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1983
- Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxyJournal of Applied Physics, 1982
- Epitaxial Growth of Aluminum Nitride on Sapphire Using Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1981
- Growth and properties of AlxGa1–xN epitaxial layersPhysica Status Solidi (a), 1978
- Growth and properties of GaxAl1-xN compoundsJournal of Physics C: Solid State Physics, 1978
- Growth of high purity AlN crystalsJournal of Crystal Growth, 1976
- Growth morphology and surface-acoustic-wave measurements of AIN films on sapphireJournal of Applied Physics, 1975
- Heteroepitaxial Thermal Gradient Solution Growth of GaNJournal of the Electrochemical Society, 1972
- Thermal and Photochemical Decomposition of Gaseous Aluminum TrimethylThe Journal of Chemical Physics, 1946