Thermal recrystallization of silicon amorphous layers after argon, oxygen and nitrogen ion implantation
- 1 January 1983
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 69 (3-4) , 179-189
- https://doi.org/10.1080/00337578308217822
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
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